News Article
GTAT licensed to use Kyma`s III-nitride technology
Kyma says its PVDNC technology creates a cost-effective nanocolumnar crystalline AlN nucleation layer on flat sapphire and silicon substrates as well as on patterned sapphire substrates. The technology will be used in the production of LEDs and power devices
Kyma Technologies has licensed its nitride semiconductor plasma vapour deposition of nanocolumns (PVDNC) technology to GT Advanced Technologies (GTAT).
The nanocolumnar AlN presents an excellent surface for subsequent nucleation and growth of GaN buffer layers which are important for GaN LEDs and power electronics.
Kyma has offered PVDNC AlN templates to the market for many years and also employs such templates as a starting material for growing bulk and thin film crystalline GaN by hydride vapour phase epitaxy (HVPE).
“After many years of advancing our patented PVDNC technology, we are excited to partner with GT Advanced Technologies who we believe is well positioned to broadly disseminate this technology not only into the rapidly growing market for nitride based LEDs but also into the nascent market for nitride based power electronics,” says Keith Evans, Kyma’s President and CEO.
The PVDNC technology complements GT’s recently announced move into HVPE equipment. The combination of PVDNC AlN nucleation layers and HVPE GaN buffer layers has the potential to double the throughput of today’s MOCVD tools and to improve the performance and yield of devices. The result is higher throughput of improved devices made at lower fabrication cost, a triple win for the customer.
“Kyma’s innovative “nano-columnar” PVDNC technology adds an important component to our expanding LED product base,” concludes Tom Gutierrez, GT’s president and CEO. “Our goal is to offer a range of solutions that improve the quality and lower the cost of LED manufacturing. The combination of GT’s PVD AlN tool coupled with the HVPE system we are developing is expected to offer LED manufacturers a significant cost reduction to producing epi-ready wafers compared with today’s current manufacturing techniques.”
The nanocolumnar AlN presents an excellent surface for subsequent nucleation and growth of GaN buffer layers which are important for GaN LEDs and power electronics.
Kyma has offered PVDNC AlN templates to the market for many years and also employs such templates as a starting material for growing bulk and thin film crystalline GaN by hydride vapour phase epitaxy (HVPE).
“After many years of advancing our patented PVDNC technology, we are excited to partner with GT Advanced Technologies who we believe is well positioned to broadly disseminate this technology not only into the rapidly growing market for nitride based LEDs but also into the nascent market for nitride based power electronics,” says Keith Evans, Kyma’s President and CEO.
The PVDNC technology complements GT’s recently announced move into HVPE equipment. The combination of PVDNC AlN nucleation layers and HVPE GaN buffer layers has the potential to double the throughput of today’s MOCVD tools and to improve the performance and yield of devices. The result is higher throughput of improved devices made at lower fabrication cost, a triple win for the customer.
“Kyma’s innovative “nano-columnar” PVDNC technology adds an important component to our expanding LED product base,” concludes Tom Gutierrez, GT’s president and CEO. “Our goal is to offer a range of solutions that improve the quality and lower the cost of LED manufacturing. The combination of GT’s PVD AlN tool coupled with the HVPE system we are developing is expected to offer LED manufacturers a significant cost reduction to producing epi-ready wafers compared with today’s current manufacturing techniques.”
